Professor Hwang Cheol Seong of the Department of Materials Science and Engineering and his research team recently invented a type of cloth that is woven with RRAM (Resistive Random-Access Memory) technology. The new memory cloth does not use any electricity and will be able to be worn like normal clothing. The professor and his team used a thread covered in aluminum and carbon fiber to develop a material that can be woven into cloth.

RRAM is a form of technology that stores information using ions as opposed to electrons to detect changes in electrical resistance. When the resistance is low, the technology functions as an insulator and stores data. Conversely, if the resistance is high, electricity is allowed to flow through and the material becomes a conductor. Through this method, information that is transmitted a single time is recorded and no additional supply of information is needed to maintain the information already obtained.

Professor Hwang’s invention comes with many advantages. Unlike other electronic fabrics, which are encumbered by wires, the RRAM cloth is unobtrusive and can be worn and washed like ordinary clothing. This cloth also has low production costs and can be produced in large quantities like ordinary fabric.